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English(EN) The current state of Hybrid Bonding in 2026 — TSMC sits at 6 microns and the HBM delay that nobody expected Hybrid bonding, the copper-to-copper joining techniq

HBM混合键合延迟至本十年末,逻辑芯片应用取得进展

混合键合,一种铜对铜芯片连接技术,已用于逻辑芯片的高产量生产,但其在高带宽内存(HBM)上的应用已推迟。最近的JEDEC决定允许HBM4继续使用不太先进的微凸块技术,将混合键合在HBM上的首次亮相推迟到本十年末的HBM4E和HBM5。虽然台积电正在推进其混合键合间距,英特尔已将其应用于服务器CPU,但内存领域的延迟归因于此JEDEC决定。 AI

影响 HBM采用的延迟可能会影响依赖高带宽内存的AI加速器的性能和成本。

排序理由 文章详细介绍了芯片制造技术(混合键合)的进展以及其在关键内存标准(HBM)应用上的重大延迟,影响了半导体行业的路线图。

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HBM混合键合延迟至本十年末,逻辑芯片应用取得进展

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文章详细介绍了芯片制造技术(混合键合)的进展以及其在关键内存标准(HBM)应用上的重大延迟,影响了半导体行业的路线图。
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报道来源 [2]

  1. Tom's Hardware TIER_1 English(EN) · Luke James ·

    2026年混合键合的现状——台积电(TSMC)处于6微米水平,以及无人预料到的HBM延迟

    Hybrid bonding, the copper-to-copper joining technique that replaces solder microbumps in 3D chip stacks, is in high-volume production on logic and freshly postponed on memory.

  2. Mastodon — mastodon.social TIER_1 English(EN) · [email protected] ·

    2026年混合键合的现状 — TSMC 处于 6 微米水平,以及出乎所有人意料的 HBM 延迟 混合键合,铜对铜连接技术

    The current state of Hybrid Bonding in 2026 — TSMC sits at 6 microns and the HBM delay that nobody expected Hybrid bonding, the copper-to-copper joining technique that replaces solder microbumps in 3D chip stacks, is in high-volume production on logic and freshly postponed on mem…