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English(EN) Samsung teases new HBM5 with twice the performance of HBM4E —ambitious data transfer rates could hint at 4,096-bit interface Samsung expects HBM5 to deliver 4 T

三星预告HBM5内存,性能是HBM4E的两倍

三星已发布其下一代高带宽内存HBM5,其目标是与当前的HBM4E标准相比,性能翻倍,功耗效率提高20%。这一雄心勃勃的目标可能通过将接口宽度翻倍至4,096位来实现,有望使AI加速器在十年末达到高达96 TB/s的内存带宽。虽然具体规格仍是推测,但三星的公告预示着AI和高性能计算应用的内存技术将实现重大飞跃。 AI

影响 内存技术的这项进步对于扩展AI加速器至关重要,可能支持具有显著更高聚合内存带宽的系统。

排序理由 三星发布下一代HBM5内存,详细介绍了性能和效率目标。

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三星预告HBM5内存,性能是HBM4E的两倍

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报道来源 [2]

  1. Tom's Hardware TIER_1 English(EN) · Anton Shilov ·

    三星预告新款 HBM5,性能是 HBM4E 的两倍——雄心勃勃的数据传输速率可能暗示 4,096 位接口

    Samsung expects HBM5 to deliver 4 TB/s of bandwidth per stack by late 2020s, which will enable AI accelerators with aggregated memory bandwidth of around 100 TB/s.

  2. Mastodon — mastodon.social TIER_1 English(EN) · [email protected] ·

    三星预告新款 HBM5,性能是 HBM4E 的两倍——雄心勃勃的数据传输速率可能暗示 4,096 位接口 三星预计 HBM5 将提供 4T

    Samsung teases new HBM5 with twice the performance of HBM4E —ambitious data transfer rates could hint at 4,096-bit interface Samsung expects HBM5 to deliver 4 TB/s of bandwidth per stack by late 2020s, which will enable AI accelerators with aggregated memory bandwidth of around 1…