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English(EN) Intel’s performance-enhanced 18A-P process enters risk production — drop-in 18A upgrade promises 9% performance improvement at iso-power, cuts thermal resistanc

Intel 的 18A-P 工艺进入风险试产,性能有所提升

Intel 已将其性能增强型 18A-P 半导体工艺推进到风险试产阶段。此现有 18A 节点的升级在同等功耗下可提供 9% 的性能提升,或在相同性能下降低 18% 的功耗。18A-P 工艺与现有 18A 设计兼容,并引入了新的晶体管选项,包括采用“Power Boost”技术的双触点 W3P 设计,旨在提高速度并降低散热电阻。 AI

影响 半导体制造的这一进步可能在未来实现更强大、更高效的 AI 硬件。

排序理由 Intel 宣布一项新的半导体工艺节点进入风险试产,该节点在研究背景下进行了详细介绍。

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Intel 的 18A-P 工艺进入风险试产,性能有所提升

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Intel 宣布一项新的半导体工艺节点进入风险试产,该节点在研究背景下进行了详细介绍。
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报道来源 [2]

  1. Tom's Hardware TIER_1 English(EN) · Jake Roach ·

    Intel 性能增强版 18A-P 工艺进入风险试产 — 兼容升级版 18A 承诺在相同功耗下性能提升 9%,热阻降低 40%

    Intel's enhanced 18A-P has entered risk production, laying the groundwork to ramp the node into full production in the coming months.

  2. Mastodon — mastodon.social TIER_1 English(EN) · [email protected] ·

    Intel 性能增强版 18A-P 工艺进入风险试产 — 兼容 18A 升级承诺在同等功耗下提升 9% 性能,降低热阻

    Intel’s performance-enhanced 18A-P process enters risk production — drop-in 18A upgrade promises 9% performance improvement at iso-power, cuts thermal resistance by 40% Intel's enhanced 18A-P has entered risk production, laying the groundwork to ramp the node into full production…