AMD 推出了 EXPO 超低延迟 (ULL) DDR5 内存，旨在通过优化子时序来提升性能。该公司声称，与标准 EXPO 相比，这项新功能将平均带来 4% 的性能提升，与 JEDEC 标准相比则能提升 13%，尤其有利于游戏场景。虽然兼容现有芯片组，但 EXPO ULL 需要新的 DIMM 和可能的 BIOS 更新，AMD 预计这些新内存套件的定价将与当前产品类似。 AI
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AMD provides us with a bit more detail about its upcoming EXPO Ultra Low Latency mode, which should be available from leading memory partners soon.
AMD’s upcoming EXPO ‘Ultra Low Latency’ automatic memory overclocking promises a 13% improvement over standard DDR5 speeds, as well as a 4% jump compared to standard EXPO.
AMD says new EXPO ‘Ultra Low Latency’ DDR5 memory should be 'effectively the same price' as current kits — feature will work on existing chipsets, but will require new DIMMs AMD provides us with a bit more detail about its upcoming EXPO Ultra Low Latency mode, which should be ava…
AMD promises 13% uplift with new EXPO ‘Ultra Low Latency’ overclocking on DDR5 DIMMs — automatic memory overclocking delivers 4% improvement over standard… AMD’s upcoming EXPO ‘Ultra Low Latency’ automatic memory overclocking promises a 13% improvement over standard DDR5 speeds, …