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English(EN) Intel patent reveals new XBM memory architecture that ditches HBM's costly silicon interposer — backend-transistor DRAM stack uses UCIe links and built-in repai

Intel 申请 XBM 内存架构专利以降低 AI 芯片成本

作者 PulseAugur 编辑部 · [5 个来源] ·

Intel 申请了一项名为 XBM（Cross-Batch Memory）的新内存架构专利，旨在降低 AI 内存系统的成本和复杂性。XBM 旨在通过采用后端晶体管 DRAM 和 UCIe 互连技术，绕过高带宽内存 (HBM) 中昂贵的硅中介层。这种方法有望通过提供更高的可扩展性和内置修复机制来提高良率，从而缓解 AI 芯片中的“内存墙”瓶颈。 AI

影响 可能降低 AI 芯片制造成本并提高内存性能。

排序理由 一项关于新型内存架构的专利申请。

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Intel 申请 XBM 内存架构专利以降低 AI 芯片成本

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一项关于新型内存架构的专利申请。
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报道来源 [5]

  1. 36氪 (36Kr) TIER_1 中文(ZH) ·

    Intel专利揭示新型XBM内存架构，旨在绕过HBM硅中介层以降低AI内存成本

    7月8日消息，英特尔一项近日公开的专利申请显示，公司正研发名为XBM（Cross-Batch Memory）的新型高带宽内存架构，旨在通过取消HBM所需的硅中介层、采用UCIe互连及内置冗余修复机制，降低先进封装成本并缓解AI芯片“内存墙”瓶颈。专利显示，XBM采用后端晶体管（BEOL）DRAM堆叠设计，可在保持与HBM4相近封装尺寸的同时提升可扩展性，并支持缺陷修复以提高良率。（界面）

  2. Tom's Hardware TIER_1 English(EN) · Etiido Uko ·

    研究人员将HBM侧放以应对AI内存的散热瓶颈 — 韩国V-Die和日本MOSAIC设计有望实现更高带宽、更密集堆叠和更凉爽的未来GPU

    Researchers in Korea and Japan have proposed sideways-stacked DRAM designs that could push future AI memory beyond conventional HBM limits by improving cooling, bandwidth, and capacity while reducing reliance on TSV-heavy vertical stacks.

  3. Tom's Hardware TIER_1 English(EN) · Etiido Uko ·

    Intel专利揭示新型XBM内存架构，摒弃HBM昂贵的硅中介层——后端晶体管DRAM堆栈采用UCIe连接和内置修复，以缓解AI的内存瓶颈

    Intel’s XBM patent proposes an HBM alternative that uses backend-transistor DRAM, UCIe chiplet links, and repair logic to reduce packaging costs and complexity.

  4. Mastodon — fosstodon.org TIER_1 English(EN) · [email protected] ·

    研究人员将HBM侧放以应对AI内存散热瓶颈 — 韩国V-Die和日本MOSAIC设计… 韩国和日本的研究人员提出了侧放方案

    Researchers turn HBM on its side to tackle AI memory’s heat wall — Korean V-Die and Japanese MOSAIC desig… Researchers in Korea and Japan have proposed sideways-stacked DRAM designs that could push future AI memory beyond conventional HBM limits by improving cooling, bandwidth, a…

    链接 tomshardware.com/…/researchers-turn-hbm-o… tomshardware.com/tech-industry
  5. Mastodon — fosstodon.org TIER_1 English(EN) · [email protected] ·

    Intel专利揭示新型XBM内存架构，摒弃HBM昂贵的硅中介层——后端晶体管DRAM堆栈采用UCIe连接和内置修复

    Intel patent reveals new XBM memory architecture that ditches HBM's costly silicon interposer — backend-transistor DRAM stack uses UCIe links and built-in repair to … Intel’s XBM patent proposes an HBM alternative that uses backend-transistor DRAM, UCIe chiplet links, and repair …

    链接 tomshardware.com/…/intel-patent-reveals-n… tomshardware.com/tech-industry

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