English(EN) Micron's next-generation 3D NAND to double bit density with over 400 layers, offering extreme performance

美光发布采用晶圆对晶圆键合技术的400+层3D NAND

作者 PulseAugur 编辑部 · [1 个来源] · 2026-10-23 15:32

美光宣布其下一代G11 3D NAND技术将于2027年下半年进入量产。这项新技术将拥有超过400层，并采用晶圆对晶圆键合技术，将比特密度翻倍，I/O性能提升50%，并降低功耗。这些进步预计将惠及客户端和数据中心SSD，以及需要高带宽和高效率的新兴AI存储设备。 AI

影响存储密度和性能的提升有望加速需要高带宽、高效数据处理的AI专用硬件的开发和采用。

排序理由宣布具有显著性能和密度改进的新一代内存技术。[lever_c_demoted from significant: ic=1 ai=0.7]

AI 生成摘要 · Google Gemini · 来自 1 个来源。我们如何撰写摘要 →

本文如何被排名

Signal score: 24 / 100; Composite score across the factors below. Higher = stronger signal that this story matters right now.
Newsworthiness bucket: Research; 宣布具有显著性能和密度改进的新一代内存技术。[lever_c_demoted from significant: ic=1 ai=0.7]
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Tom's Hardware TIER_1 English(EN) · Anton Shilov · 2026-10-23 15:32

Micron's next-generation 3D NAND to double bit density with over 400 layers, offering extreme performance

Micron's G11 3D NAND promises 42 Gb/mm2 and 5,400 MT/s interface speed, enabling SSDs with extreme capacity and performance.