English(EN) Chinese researchers extend future memory endurance 100-fold in semiconductor advance

中国研究人员通过AlScN技术将未来内存耐久性提高100倍

作者 PulseAugur 编辑部 · [1 个来源] · 2026-09-13 10:52

中国研究人员通过限制纤锌矿铁电体中的氮空位移动，显著提高了下一代内存技术的耐久性。这项进展允许超过100亿次写入循环，与之前在氮化铝钪（AlScN）等材料上的成就相比提高了100倍。这项由西安交通大学、香港城市大学和复旦大学合作取得的突破，解决了关键的可靠性障碍，并可能加速铁电内存在高性能计算和AI系统中的应用。 AI

影响内存耐久性的这项进展可以为未来的AI系统提供更强大、更高效的硬件，可能降低延迟并提高处理能力。

排序理由 Science期刊发表的关于材料科学突破的学术论文。[lever_c_demoted from research: ic=1 ai=0.7]

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报道来源 [1]

SCMP — Tech TIER_1 English(EN) · Ben Jiang · 2026-09-13 10:52

中国研究人员在半导体进展中将未来记忆耐力延长100倍

Chinese researchers have developed a way to make an emerging type of memory chip much more durable, potentially overcoming a critical reliability barrier to its use in high-performance computing and future artificial intelligence systems as the AI boom drives demand for more adva…

本文如何被排名

报道来源 [1]

中国研究人员在半导体进展中将未来记忆耐力延长100倍

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