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English(EN) Hot Chips 2026: Samsung reveals a three-phase HBM roadmap that puts logic and compute inside memory — zHBM ultimately stacks DRAM directly on top of the processor

三星计划通过zHBM路线图实现计算与内存的集成

三星已概述了一项三阶段战略,旨在将其高带宽内存(HBM)架构直接集成逻辑和计算能力。该公司的zHBM方法旨在将DRAM直接堆叠在处理器之上,从而无需独立的插入器。这一在Hot Chips 2026上详细介绍的演进,首先将HBM基板移至先进的逻辑工艺,使其能够处理以前由处理器管理的函数,并回收宝贵的XPU面积。 AI

影响 这种集成可以通过减少内存瓶颈和提高计算密度,从而实现更高效的AI加速器。

排序理由 该条目详细介绍了在会议上展示的HBM技术路线图和架构演进。[lever_c_demoted from research: ic=1 ai=0.7]

在 Tom's Hardware 阅读 →

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三星计划通过zHBM路线图实现计算与内存的集成

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该条目详细介绍了在会议上展示的HBM技术路线图和架构演进。[lever_c_demoted from research: ic=1 ai=0.7]
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报道来源 [1]

  1. Tom's Hardware TIER_1 English(EN) · Etiido Uko ·

    Hot Chips 2026:三星公布三阶段HBM路线图,将逻辑和计算置于内存内部——zHBM最终将DRAM直接堆叠在处理器之上

    Samsung detailed a three-phase HBM roadmap at Hot Chips 2026 that progressively moves logic into the base die and ultimately stacks DRAM directly on the processor.