HBM5
PulseAugur coverage of HBM5 — every cluster mentioning HBM5 across labs, papers, and developer communities, ranked by signal.
- 2026-09-02 research_milestone Samsung teased its next-generation HBM5 memory, aiming for double the performance and 20% better power efficiency than HBM4E. source
- 2026-07-27 product_launch Samsung Electronics announced that its next-generation HBM5 memory will use a 2nm GAA process, offering over 50% speed improvement. source
2 day(s) with sentiment data
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Hybrid Bonding for HBM Delayed to Decade's End, Logic Adoption Advances
Hybrid bonding, a copper-to-copper chip joining technique, is in high-volume production for logic chips but its adoption for High Bandwidth Memory (HBM) has been delayed. A recent JEDEC decision allows HBM4 to continue …
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Samsung teases HBM5 memory with double the performance of HBM4E
Samsung has announced its next-generation High Bandwidth Memory, HBM5, which aims to double the performance and increase power efficiency by 20% compared to the current HBM4E standard. This ambitious goal may be achieve…
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AI hardware advances: Cerebras stacks DRAM, HBM faces growing costs
At Hot Chips 2026, leading memory and chip manufacturers discussed the future of AI hardware, focusing on advancements in wafer-scale processing and High Bandwidth Memory (HBM). Cerebras unveiled its roadmap for stacked…
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Samsung unveils new memory tech; China advances chipmaking efforts
Samsung has unveiled three new memory technologies: zHBM, zNAND-O, and BV-NAND, utilizing advanced wafer bonding techniques. zHBM aims for eight times the performance of HBM5, while zNAND-O places multiple NAND stacks a…
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Samsung unveils next-gen AI memory tech: zHBM, zNAND-O, BV-NAND
Samsung Electronics has unveiled its next-generation memory roadmap for AI infrastructure, featuring new technologies like zHBM, zNAND-O, and BV-NAND. These innovations, presented at the Future Storage and Memory Confer…
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Samsung Electronics to use 2nm GAA for HBM5, boosting speed over 50%
Samsung Electronics has confirmed that its next-generation HBM5 memory will utilize a 2nm Gate-All-Around (GAA) process, promising over a 50% speed increase compared to HBM4E. This advanced manufacturing node is expecte…
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Samsung and Nvidia Discuss HBM4, Foundry, and Future Chip Tech
Samsung Electronics' chip division head, Jun, met with NVIDIA CEO Jensen Huang to discuss potential collaborations. The discussions covered short-term partnerships in HBM4 and foundry services, as well as ongoing work o…
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Samsung and SK Hynix race to cool next-gen AI memory
Samsung has unveiled a mockup of its HBM5 memory at Computex 2026, featuring a new Heat Path Block (HPB) cooling system. This development places Samsung in direct thermal management competition with SK hynix, which rece…
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SK hynix unveils integrated cooling for AI memory
SK hynix has introduced 'iHBM,' a novel thermal architecture designed to address the critical heating issues in High-Bandwidth Memory (HBM) used for AI acceleration. This technology integrates cooling elements directly …