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中文(ZH) 三星电子确认HBM5将采用2纳米GAA工艺，速度较HBM4E提升50%以上

Samsung Electronics to use 2nm GAA for HBM5, boosting speed over 50%

By PulseAugur Editorial · [1 sources] ·

Samsung Electronics has confirmed that its next-generation HBM5 memory will utilize a 2nm Gate-All-Around (GAA) process, promising over a 50% speed increase compared to HBM4E. This advanced manufacturing node is expected to enhance integration through Silicon Through-Silicon Via (TSV) technology. Samsung aims to leverage its expertise from the 4nm HBM4E process to lead the semiconductor ecosystem by expanding collaborations across various sectors, including AI, HPC, automotive, and robotics. AI

IMPACT This advancement in HBM5 technology is crucial for accelerating AI and HPC workloads by providing faster data transfer rates.

RANK_REASON Announcement of a new generation of memory technology with significant performance improvements and advanced manufacturing process. [lever_c_demoted from significant: ic=1 ai=0.7]

Read on 36氪 (36Kr) →

AI-generated summary · Google Gemini · from 1 sources. How we write summaries →

Samsung Electronics to use 2nm GAA for HBM5, boosting speed over 50%

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Announcement of a new generation of memory technology with significant performance improvements and advanced manufacturing process. [lever_c_demoted from significant: ic=1 ai=0.7]
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COVERAGE [1]

  1. 36氪 (36Kr) TIER_1 中文(ZH) ·

    Samsung Electronics Confirms HBM5 Will Use 2nm GAA Process, Over 50% Faster Than HBM4E

    三星电子7月27日发布对公司半导体事业部技术开发室长具子铉的采访。具子铉表示，预计下一代HBM5内存的运行速度将比HBM4E快50%以上，“HBM5基础芯片将采用GAA结构的2纳米工艺，并实现更高集成度的硅通孔（TSV）”。具子铉称，三星电子将基于在4纳米HBM4基础芯片上获得的经验和技术竞争力，提前在HBM5中引入2纳米工艺，并拓展与移动、HBM、AI、HPC、汽车电子、机器人等领域的客户合作，引领半导体生态系统进一步发展壮大。（界面）

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