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Samsung teases HBM5 memory with doubled performance target

Samsung has announced its next-generation HBM5 memory, aiming to double the performance and improve power efficiency by 20% compared to the current HBM4E standard. This ambitious goal suggests a potential shift to a 4,096-bit interface, which would significantly increase data transfer rates. The company is targeting peak bandwidth of around 4 TB/s per stack by 2028-2029, with AI accelerators potentially featuring 20-24 HBM5 stacks per package, reaching up to 96 TB/s. AI

IMPACT This advancement in memory technology is crucial for powering the next generation of AI accelerators, enabling higher bandwidth and faster data processing.

RANK_REASON Samsung announced its next-generation HBM5 memory specification, detailing performance and efficiency targets. [lever_c_demoted from research: ic=1 ai=0.7]

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Samsung teases HBM5 memory with doubled performance target

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Samsung announced its next-generation HBM5 memory specification, detailing performance and efficiency targets. [lever_c_demoted from research: ic=1 ai=0.7]
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COVERAGE [1]

  1. Tom's Hardware TIER_1 English(EN) · Anton Shilov ·

    Samsung teases new HBM5 with twice the performance of HBM4E —ambitious data transfer rates could hint at 4,096-bit interface

    Samsung expects HBM5 to deliver 4 TB/s of bandwidth per stack by late 2020s, which will enable AI accelerators with aggregated memory bandwidth of around 100 TB/s.