English(EN) HUST-Led Team Cuts Contact Resistance 94% in Monolayer WSe2 p-Type Transistors With Oxygen Doping

氧掺杂将晶体管接触电阻降低94%

作者 PulseAugur 编辑部 · [1 个来源] · 2026-11-13 07:15

研究人员开发了一种使用氧掺杂显著降低单层WSe2 p型晶体管接触电阻的新方法。这项进展使接触电阻降低了94%，并使一个16nm沟道器件实现了1,635 μA/μm的高电流密度和81%的弹道比。 AI

影响改进的晶体管效率可能带来更快、更节能的人工智能硬件。

排序理由研究论文，详细介绍了一种提高晶体管性能的新技术。[lever_c_demoted from research: ic=1 ai=0.7]

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Pandaily TIER_1 English(EN) · [email protected] (Pandaily) · 2026-11-13 07:15

华中科技大学牵头团队通过氧掺杂将单层WSe2 p型晶体管的接触电阻降低94%

A HUST-led team used oxygen doping to cut contact resistance 94% in monolayer WSe2 p-type transistors. A 16nm-channel device reached 1,635 μA/μm with an 81% ballistic ratio.