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English(EN) A Two-Mirror Faceted Projection System for EUV Lithography

新型EUV光刻系统有望实现更高吞吐量和亚10纳米特征分辨率

作者 PulseAugur 编辑部 · [1 个来源] ·

研究人员开发了一种新颖的双反射镜投影系统，用于极紫外（EUV）光刻，能够在13.5纳米和11.2纳米波长下实现4倍缩小成像。与传统系统相比，该设计显著提高了光学吞吐量，保留了掩模发出的50-60%的功率。该系统采用了单独优化的布拉格多层膜涂层，并已证明能够高分辨率地模拟亚10纳米特征的航空图像，包括孤立峰和6纳米线对。 AI

排序理由 该集群包含一篇学术论文，详细介绍了科学领域的新技术方法。[lever_c_demoted from research: ic=1 ai=0.1]

在 arXiv cs.LG 阅读 →

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新型EUV光刻系统有望实现更高吞吐量和亚10纳米特征分辨率

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该集群包含一篇学术论文，详细介绍了科学领域的新技术方法。[lever_c_demoted from research: ic=1 ai=0.1]
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报道来源 [1]

  1. arXiv cs.LG TIER_1 English(EN) · Vasiliy A. Es'kin, Egor V. Ivanov, Olga V. Martynova ·

    用于EUV光刻的双反射镜多面投影系统

    arXiv:2609.11299v1 Announce Type: cross Abstract: We propose an all-reflective two-mirror projection system for extreme ultraviolet (EUV) lithography operating at exposure wavelengths of $13.5$~nm (Mo/Si) and $11.2$~nm (Ru/Be), delivering a fourfold ($4\times$) demagnification of…

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