HBM3E
PulseAugur coverage of HBM3E — every cluster mentioning HBM3E across labs, papers, and developer communities, ranked by signal.
2 day(s) with sentiment data
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Public funds buy billions in stocks, Micron advances next-gen memory
Publicly offered funds have significantly increased their self-purchases of their own products, signaling strong confidence in the stock market. These funds have invested over 7 billion yuan this year, with a particular…
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Micron Technology targets late 2027 for next-gen DRAM/NAND mass production
Micron Technology announced that its next-generation DRAM and NAND memory nodes are progressing well, with mass production expected to begin in the second half of 2027. The company also reported that its HBM4 12-layer p…
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DRAM industry revenue surges 81% on rising contract prices
The DRAM industry experienced an 81% revenue increase in the first quarter, reaching $97 billion, driven by a significant 93-98% rise in contract prices. This surge is attributed to expanding AI applications, which are …
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AMD launches MI350P PCIe AI card, claiming 40% speed advantage over Nvidia H200
AMD has introduced the Instinct MI350P, a new PCIe AI accelerator card featuring 144GB of HBM3E memory. This card is designed as a direct upgrade for air-cooled servers and claims to offer a significant performance adva…
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PCIe 8.0 draft targets 1 TB/s, AMD launches new AI GPU, EU delays AI Act rules
The PCI-SIG has released a draft specification for PCIe 8.0, aiming to double the data transfer rate to 1 TB/s per lane. This advancement is crucial for supporting the increasing demands of AI and high-performance compu…
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AMD launches Instinct MI350P GPU for enterprise AI workloads
AMD has introduced its new Instinct MI350P GPU, designed for enterprises exploring AI applications. This dual-slot card features 144 GB of HBM3e memory and offers up to 4.6 teraFLOPS of FP4 performance. The MI350P aims …
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Micron's Tongluo fab capacity may exceed estimates with EUV upgrades
Micron is acquiring the PSMC P5 Tongluo fab in Taiwan, with plans to significantly expand its wafer output by 2028. The facility's Section B is being designed for EUV compatibility and advanced HBM manufacturing, potent…