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Micron's Tongluo fab capacity may exceed estimates with EUV upgrades

By PulseAugur Editorial · [10 sources] ·

Micron is acquiring the PSMC P5 Tongluo fab in Taiwan, with plans to significantly expand its wafer output by 2028. The facility's Section B is being designed for EUV compatibility and advanced HBM manufacturing, potentially supporting future DRAM nodes like HBM3E and HBM4E. While Section A is being converted for existing processes, the overall expansion is expected to increase Micron's capacity beyond initial estimates. AI

IMPACT Micron's expanded HBM production capacity could influence the supply chain for AI accelerators and high-performance computing.

RANK_REASON Analysis of a major semiconductor fab acquisition and expansion impacting future memory production capacity.

Read on X — SemiAnalysis →

AI-generated summary · Google Gemini · from 10 sources. How we write summaries →

Micron's Tongluo fab capacity may exceed estimates with EUV upgrades

COVERAGE [10]

  1. X — SemiAnalysis TIER_1 English(EN) · SemiAnalysis_ ·

    For more details, including Micron's Tongluo site, please refer to our Memory Model, where we offer comprehensive insight on memory (10/10): https://t.co/aKKMh3

    For more details, including Micron's Tongluo site, please refer to our Memory Model, where we offer comprehensive insight on memory (10/10): https://t.co/aKKMh3y6OH

  2. X — SemiAnalysis TIER_1 English(EN) · SemiAnalysis_ ·

    But by the end of 2028, Micron’s wafer output could be much larger than expected. That growth would be driven by the two Tongluo phases, plus Idaho 1 and Idaho

    But by the end of 2028, Micron’s wafer output could be much larger than expected. That growth would be driven by the two Tongluo phases, plus Idaho 1 and Idaho 2 ramps. (9/10)

  3. X — SemiAnalysis TIER_1 English(EN) · SemiAnalysis_ ·

    In the near term, we do not think these incremental wafers materially change the 2027 DRAM supply/demand picture. The timing is too late, especially for Section

    In the near term, we do not think these incremental wafers materially change the 2027 DRAM supply/demand picture. The timing is too late, especially for Section B. (8/10)

  4. X — SemiAnalysis TIER_1 English(EN) · SemiAnalysis_ ·

    Section B could also be larger than previously assumed. If Micron applies a similar cleanroom optimization strategy there (which is likely the case), maximum ca

    Section B could also be larger than previously assumed. If Micron applies a similar cleanroom optimization strategy there (which is likely the case), maximum capacity could reach roughly higher than 40-45kwspm previously assumed. (7/10)

  5. X — SemiAnalysis TIER_1 English(EN) · SemiAnalysis_ ·

    Micron appears to be actively reshuffling cleanroom space in Section A and Section B That could lift expected capacity materially higher than 45–50kwspm. (6/10)

    Micron appears to be actively reshuffling cleanroom space in Section A and Section B That could lift expected capacity materially higher than 45–50kwspm. (6/10)

  6. X — SemiAnalysis TIER_1 English(EN) · SemiAnalysis_ ·

    Initially, many expected the Tongluo site to reach around 90k wafer starts per month in total capacity. But the latest industry chatter suggests the ceiling may

    Initially, many expected the Tongluo site to reach around 90k wafer starts per month in total capacity. But the latest industry chatter suggests the ceiling may be higher. (5/10)

  7. X — SemiAnalysis TIER_1 English(EN) · SemiAnalysis_ ·

    That means Section B could support 1b for HBM3E/HBM4, or potentially 1γ for HBM4E.

    That means Section B could support 1b for HBM3E/HBM4, or potentially 1γ for HBM4E. This matters because EUV compatibility gives Micron more flexibility for future DRAM and HBM nodes. This also give additional space for Micron to conduct more node migration and increase bit

  8. X — SemiAnalysis TIER_1 English(EN) · SemiAnalysis_ ·

    Section B is different.

    Section B is different. The cleanroom has not broken ground yet, so it is unlikely to come online before the end of 2027. But because Micron can design it from scratch, it should be built to support EUV and advanced HBM manufacturing. (3/10)

  9. X — SemiAnalysis TIER_1 English(EN) · SemiAnalysis_ ·

    The site has two key sections: Section A and Section B.

    The site has two key sections: Section A and Section B. Section A already exists and is now being converted for likely Micron’s 1b DRAM process. Because it is not EUV-compatible, 1b is a practical fit for the existing cleanroom setup with proper equipment from Micron in coming

  10. X — SemiAnalysis TIER_1 English(EN) · SemiAnalysis_ ·

    Earlier this year, Micron announced it would acquire PSMC’s P5 Tongluo fab in Miaoli, Taiwan—the process has officially begun.

    Earlier this year, Micron announced it would acquire PSMC’s P5 Tongluo fab in Miaoli, Taiwan—the process has officially begun. At first glance, this looked like a straightforward legacy logic/memory fab acquisition. But the details worth a close look. (1/10) 🧵 https://t.co/6OQyI…

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