FinFET
PulseAugur coverage of FinFET — every cluster mentioning FinFET across labs, papers, and developer communities, ranked by signal.
1 day(s) with sentiment data
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GlobalFoundries unveils 7nm-class FD-SOI process for edge AI and automotive
GlobalFoundries has announced its new 7nm-class FDX Fusion manufacturing node, marking a return to advanced fabrication after abandoning FinFET technology years prior. This new node utilizes planar transistors and FD-SO…
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AI and LLMs integrated with TCAD for semiconductor design
A new paper explores the integration of AI, including machine learning and large language models (LLMs), with Technology Computer-Aided Design (TCAD) for semiconductor device design and defect discovery. The research de…
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New GAT Surrogate Accelerates FinFET Device Simulation
Researchers have developed a novel physics-informed graph attention network (GAT) surrogate that operates directly on TCAD meshes to simulate FinFET device behavior. This approach predicts electrostatic potential and ca…
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Intel's 14A process shows faster-than-expected defect reduction
Intel's Chief Financial Officer, David Zinsner, reported significant progress on the company's upcoming 14A fabrication process. Defect density is decreasing faster than anticipated, a performance level Zinsner compared…
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New hardware extension Ventaglio boosts Transformer inference speed
Researchers have developed a novel hardware extension called Ventaglio, designed to significantly accelerate sparse tensor contractions on vector processors, a critical operation for Transformer model inference. This ex…
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New Bit-Serial CNN Accelerator Boosts XR Vision Efficiency
Researchers have developed BitFair, a novel bit-serial CNN accelerator designed for ultra-low-power Extended Reality (XR) applications. This accelerator incorporates learnable early termination and adaptive bit ordering…
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Autoencoder framework enables rapid FinFET transistor modeling
Researchers have developed a machine learning framework using an autoencoder to efficiently model FinFET transistors. This autoencoder compresses current-voltage (I-V) curves into a latent space, capturing essential dev…
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AI framework accelerates GaN FinFET design, boosting efficiency
Researchers have developed PALTO, a physics-informed active learning framework to optimize the design of Gallium Nitride (GaN) tri-gate FinFETs for vertical power delivery systems. This machine learning approach signifi…