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AI and LLMs integrated with TCAD for semiconductor design

A new paper explores the integration of AI, including machine learning and large language models (LLMs), with Technology Computer-Aided Design (TCAD) for semiconductor device design and defect discovery. The research demonstrates how simulation-augmented ML can achieve device engineer-level performance with minimal domain expertise, using auto-encoder models and noise engineering to learn latent physics from TCAD data. The paper details applications such as inverse-engineering diode characteristics, predicting transistor behavior, and automatically calibrating TCAD parameters, while also envisioning the future role of LLMs and multimodal LLMs in automating device design and defect analysis. AI

IMPACT This research could accelerate semiconductor innovation by enabling more efficient and automated device design and defect discovery through AI-driven simulations.

RANK_REASON Research paper detailing novel applications of AI and LLMs in semiconductor design using TCAD. [lever_c_demoted from research: ic=1 ai=1.0]

Read on arXiv cs.LG →

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AI and LLMs integrated with TCAD for semiconductor design

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Research paper detailing novel applications of AI and LLMs in semiconductor design using TCAD. [lever_c_demoted from research: ic=1 ai=1.0]
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COVERAGE [1]

  1. arXiv cs.LG TIER_1 English(EN) · Hiu Yung Wong ·

    AI and TCAD for Inverse Design and Defect Discovery: From Simple Machine Learning to LLM

    arXiv:2609.07046v1 Announce Type: new Abstract: AI has revolutionized various engineering domains, but its impact on semiconductor device design and defect discovery is still limited, due to limited data and the curse of dimensionality. In this paper, we will discuss our work on …