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English(EN) PALTO: Physics-Informed Active Learning for Tri-Gate FinFET Design Optimization for Vertical Power Delivery

AI框架加速氮化镓鳍式场效应晶体管设计,提高效率

研究人员开发了PALTO,一个物理信息主动学习框架,用于优化垂直供电系统中氮化镓(GaN)三栅鳍式场效应晶体管的设计。与传统的TCAD方法相比,这种机器学习方法通过智能引导仿真,显著加速了设计过程。该框架识别出两款优化器件,其中一款器件的性能优于工业基准,在0.49欧姆导通电阻下实现了3.3A的电流,并展示了2倍的开关效率。 AI

影响 加速优化半导体器件的发现,可能带来更高效的电力电子产品。

排序理由 该集群包含一篇详细介绍新研究方法的学术论文。[lever_c_demoted from research: ic=1 ai=1.0]

在 arXiv cs.AI 阅读 →

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AI框架加速氮化镓鳍式场效应晶体管设计,提高效率

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该集群包含一篇详细介绍新研究方法的学术论文。[lever_c_demoted from research: ic=1 ai=1.0]
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报道来源 [1]

  1. arXiv cs.AI TIER_1 English(EN) · Ayoub Sadeghi, Leonid Popryho, Inna Partin-Vaisband ·

    PALTO:用于垂直功率传输的三栅极FinFET设计优化的物理信息主动学习

    arXiv:2606.01265v1 Announce Type: cross Abstract: This paper demonstrates the effectiveness of machine learning-driven optimization for designing application-specific GaN tri-gate FinFETs in vertical power delivery systems. Conventional TCAD-based approaches are computationally i…