东京大学的研究人员开发了一种新型自旋电子存储器器件，该器件利用激光在惊人的40皮秒内切换比特。这项基于Mn₃Sn的非易失性存储器技术运行时的发热量极小，并且比目前的DRAM快1000多倍。这项创新有望用于创建更高效的AI硬件和先进的存储系统。 AI
影响 这项在存储器速度和效率方面的突破可以显著增强AI硬件的能力。
排序理由 大学实验室在新型存储器技术方面的研究里程碑。
AI 生成摘要 · Google Gemini · 来自 2 个来源。 我们如何撰写摘要 →
东京研究人员公布激光驱动的存储器开关速度比DRAM快1000倍
报道来源 [2]
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Laser-driven spintronic memory device switches 1,000 times faster than DRAM —non-volatile device switches in 40 picoseconds while generating almost no heat
Researchers at the University of Tokyo demonstrated a non-volatile Mn₃Sn magnetic switching device capable of flipping bits in just 40 picoseconds while generating minimal heat, potentially paving the way for lower-power AI hardware and memory systems.
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Laser-driven spintronic memory device switches 1,000 times faster than DRAM —non-volatile device switches… Researchers at the University of Tokyo demonstrated a
Laser-driven spintronic memory device switches 1,000 times faster than DRAM —non-volatile device switches… Researchers at the University of Tokyo demonstrated a non-volatile Mn₃Sn magnetic switching device capable of flipping bits in just 40 picoseconds while generating minimal h…