English(EN) Agentic TCAD Calibration Workflow for Oxide Semiconductor Transistors

AI智能体自动执行氧化物晶体管TCAD校准

作者 PulseAugur 编辑部 · [1 个来源] · 2026-09-14 04:00

研究人员开发了一种智能工作流，该工作流使用大型语言模型（LLM）自动校准氧化物半导体晶体管的TCAD（技术计算机辅助设计）模型。这种新方法通过使LLM能够选择参数校正和评估物理模型，显著加快了传统上耗时且依赖专家的过程。与仅进行局部拟合相比，该工作流在特定晶体管的多指标器件目标方面实现了14.3倍的缩减，展示了跨偏置和几何形状的改进模型可转移性。 AI

影响加速新兴半导体技术的预测模型开发。

排序理由该集群包含一篇详细介绍使用LLM进行TCAD校准新方法的论文。[lever_c_demoted from research: ic=1 ai=1.0]

在 arXiv cs.LG 阅读 →

AI 生成摘要 · Google Gemini · 来自 1 个来源。我们如何撰写摘要 →

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Signal score: 27 / 100; Composite score across the factors below. Higher = stronger signal that this story matters right now.
Newsworthiness bucket: Tool; 该集群包含一篇详细介绍使用LLM进行TCAD校准新方法的论文。[lever_c_demoted from research: ic=1 ai=1.0]
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完整方法见我们的编辑标准。

报道来源 [1]

arXiv cs.LG TIER_1 English(EN) · Gyujun Jeong, Junmo Lee, Sungwon Cho, Woohyun Hwang, Kwangyou Seo, Suhwan Lim, Wanki Kim, Daewon Ha, Rishi Ranade, Kihang Youn, Ram Cherukuri, Yiyi Wang, Asif Khan, Shimeng Yu · 2026-09-14 04:00

面向氧化物半导体晶体管的代理TCAD校准工作流

arXiv:2609.12184v1 Announce Type: cross Abstract: Experimental TCAD calibration is essential for predictive technology modeling of emerging oxide semiconductor transistors. However, it remains time-consuming and expert dependent because of model ambiguity. Multiple physical model…

本文如何被排名

报道来源 [1]

面向氧化物半导体晶体管的代理TCAD校准工作流

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