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English(EN) A Unified Physics-Aware Quantum Machine Learning Framework across Power GaN HEMTs and Logic Nanowire FETs: Predicting Unseen Process Splits and Held-Out Geometry Combinations with Lower Error and Tighter Split-to-Split Variability

量子机器学习框架增强器件建模

研究人员开发了一个新颖的强化学习框架,该框架利用紧凑的参数化量子电路(PQC)进行器件建模,特别是在数据有限的情况下。该框架采用通过近端策略优化进行优化的图神经网络策略来搜索最优电路架构。与经典基线相比,该方法表现出优越的性能,在氮化镓高电子迁移率晶体管(GaN HEMT)和纳米线FET(NWFET)方面均实现了显著更低的平均绝对误差和更紧密的批次变异性。这些发现突显了通过RL选择的经典模拟PQC作为器件数据集的有效替代方案的有效性,即使没有明确的物理约束。 AI

影响 这项研究展示了量子机器学习和强化学习在提高器件建模的准确性和变异性方面的新颖应用,可能对半导体设计和制造产生影响。

排序理由 该集群包含一篇在arXiv上发表的研究论文,详细介绍了使用量子机器学习进行器件建模的新框架。[lever_c_demoted from research: ic=1 ai=1.0]

在 arXiv cs.AI 阅读 →

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量子机器学习框架增强器件建模

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该集群包含一篇在arXiv上发表的研究论文,详细介绍了使用量子机器学习进行器件建模的新框架。[lever_c_demoted from research: ic=1 ai=1.0]
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报道来源 [1]

  1. arXiv cs.AI TIER_1 English(EN) · Rushat Rai, Yun-Yuan Wang, Autsada Kakaen, Pei-Jie Chang, Doan Viet Nguyen, Yuan-Chieh Chiu, Doldet Tantraviwat, Niall Tumilty, Simon See, Wen-Jay Lee, Tai-Yue Li, Nan-Yow Chen, Tian-Li Wu ·

    跨越功率GaN HEMT和逻辑纳米线FET的统一物理感知量子机器学习框架:以更低的误差和更紧密的批次间变异性预测未见的工艺分割和留出的几何组合

    arXiv:2609.05251v1 Announce Type: new Abstract: We present a unified reinforcement-learning (RL) framework that discovers compact parametrized quantum circuits (PQCs) for data-scarce device modeling. A graph neural network (GNN) policy optimized by proximal policy optimization (P…