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Tokyo researchers unveil laser-driven memory switching 1000x faster than DRAM

By PulseAugur Editorial · [2 sources] ·

Researchers at the University of Tokyo have developed a novel spintronic memory device that utilizes lasers to switch bits in an astonishing 40 picoseconds. This non-volatile memory technology, based on Mn₃Sn, operates with minimal heat generation and is over 1,000 times faster than current DRAM. The innovation holds potential for creating more efficient AI hardware and advanced memory systems. AI

IMPACT This breakthrough in memory speed and efficiency could significantly enhance AI hardware capabilities.

RANK_REASON Research milestone from a university lab on a new memory technology.

Read on Tom's Hardware →

AI-generated summary · Google Gemini · from 2 sources. How we write summaries →

Tokyo researchers unveil laser-driven memory switching 1000x faster than DRAM

COVERAGE [2]

  1. Tom's Hardware TIER_1 English(EN) · Etiido Uko ·

    Laser-driven spintronic memory device switches 1,000 times faster than DRAM —non-volatile device switches in 40 picoseconds while generating almost no heat

    Researchers at the University of Tokyo demonstrated a non-volatile Mn₃Sn magnetic switching device capable of flipping bits in just 40 picoseconds while generating minimal heat, potentially paving the way for lower-power AI hardware and memory systems.

  2. Mastodon — fosstodon.org TIER_1 English(EN) · [email protected] ·

    Laser-driven spintronic memory device switches 1,000 times faster than DRAM —non-volatile device switches… Researchers at the University of Tokyo demonstrated a

    Laser-driven spintronic memory device switches 1,000 times faster than DRAM —non-volatile device switches… Researchers at the University of Tokyo demonstrated a non-volatile Mn₃Sn magnetic switching device capable of flipping bits in just 40 picoseconds while generating minimal h…

    LINKS tomshardware.com/…/laser-driven-spintroni… tomshardware.com/pc-components

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