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Oxygen doping slashes transistor contact resistance by 94%

By PulseAugur Editorial · [1 sources] ·

Researchers have developed a new method using oxygen doping to significantly reduce contact resistance in monolayer WSe2 p-type transistors. This advancement led to a 94% decrease in contact resistance and enabled a 16nm-channel device to achieve a high current density of 1,635 μA/μm with an 81% ballistic ratio. AI

IMPACT Improved transistor efficiency could lead to faster and more power-efficient AI hardware.

RANK_REASON Research paper detailing a new technique for improving transistor performance. [lever_c_demoted from research: ic=1 ai=0.7]

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AI-generated summary · Google Gemini · from 1 sources. How we write summaries →

Oxygen doping slashes transistor contact resistance by 94%

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17 / 100
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Tool
Research paper detailing a new technique for improving transistor performance. [lever_c_demoted from research: ic=1 ai=0.7]
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High
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Breaking (< 6h)
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COVERAGE [1]

  1. Pandaily TIER_1 English(EN) · [email protected] (Pandaily) ·

    HUST-Led Team Cuts Contact Resistance 94% in Monolayer WSe2 p-Type Transistors With Oxygen Doping

    A HUST-led team used oxygen doping to cut contact resistance 94% in monolayer WSe2 p-type transistors. A 16nm-channel device reached 1,635 μA/μm with an 81% ballistic ratio.

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