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ENTITY Oxygen doping modifies near-infrared band gaps in fluorescent single-walled carbon nanotubes

Oxygen doping modifies near-infrared band gaps in fluorescent single-walled carbon nanotubes

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  1. TOOL · CL_355827 ·

    Oxygen doping slashes transistor contact resistance by 94%

    Researchers have developed a new method using oxygen doping to significantly reduce contact resistance in monolayer WSe2 p-type transistors. This advancement led to a 94% decrease in contact resistance and enabled a 16n…