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Micron unveils 400+ layer 3D NAND with wafer-on-wafer bonding

By PulseAugur Editorial · [1 sources] ·

Micron has announced its next-generation G11 3D NAND technology, set to enter mass production in the second half of 2027. This new technology will feature over 400 layers and utilize wafer-on-wafer bonding to double bit density, increase I/O performance by 50%, and reduce power consumption. These advancements are expected to benefit both client and data center SSDs, as well as emerging AI-oriented storage devices requiring high bandwidth and efficiency. AI

IMPACT This advancement in storage density and performance could accelerate the development and adoption of AI-specific hardware requiring high-bandwidth, efficient data handling.

RANK_REASON Announcement of a new generation of memory technology with significant performance and density improvements. [lever_c_demoted from significant: ic=1 ai=0.7]

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AI-generated summary · Google Gemini · from 1 sources. How we write summaries →

Micron unveils 400+ layer 3D NAND with wafer-on-wafer bonding

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24 / 100
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Announcement of a new generation of memory technology with significant performance and density improvements. [lever_c_demoted from significant: ic=1 ai=0.7]
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High
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COVERAGE [1]

  1. Tom's Hardware TIER_1 English(EN) · Anton Shilov ·

    Micron's next-generation 3D NAND to double bit density with over 400 layers, offering extreme performance

    Micron's G11 3D NAND promises 42 Gb/mm2 and 5,400 MT/s interface speed, enabling SSDs with extreme capacity and performance.

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