TSMC has announced plans to integrate High-NA EUV lithography into its manufacturing processes starting in 2030. This advanced technology, capable of higher resolution, will initially use conventional 6x6-inch photomasks, with a transition to 6x12-inch masks planned for 2033. The company anticipates that its A10 or A11 process nodes will be the first to utilize this new lithography for critical layers, aiming to meet the increasing complexity of transistor architectures and the demand for more advanced chips. AI
IMPACT This advancement in lithography technology is crucial for the future manufacturing of increasingly complex AI accelerators and chips.
RANK_REASON TSMC's announcement of adopting a new, advanced lithography technology for high-volume manufacturing in a specific year.
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- 2030
- ASML
- Christophe Fouquet
- extreme ultraviolet lithography
- High-NA EUV
- Intel
- Low Na Euv
- Samsung
- TSMC
- 6x12-inch photomasks
- 6x6-inch photomasks
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