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SMIC's 7nm node advances, rivals TSMC N6 density without EUV

SMIC's third-generation 7nm-class fabrication technology, known as N+3, has achieved a smaller metal pitch than Intel's 18A and a transistor density comparable to EUV-reliant processes, surpassing TSMC's N6 node. This advancement, analyzed from Huawei's Kirin 9030 SoC, demonstrates significant progress for Chinese semiconductor manufacturing despite export restrictions. However, the N+3 node's transistor density does not translate to overall competitiveness, as the Kirin 9030 exhibits performance and energy efficiency drawbacks compared to contemporary flagship processors from other manufacturers. AI

IMPACT This advancement in fabrication technology could eventually impact the cost and performance of AI chips, though current performance metrics are not competitive.

RANK_REASON Analysis of a new semiconductor fabrication node from a major Chinese manufacturer, comparing it to leading global competitors. [lever_c_demoted from significant: ic=1 ai=0.7]

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SMIC's 7nm node advances, rivals TSMC N6 density without EUV

COVERAGE [1]

  1. Tom's Hardware TIER_1 English(EN) · Anton Shilov ·

    SMIC's third-gen 7nm node shows smaller metal pitch than Intel 18A, higher transistor density than TSMC N6 without EUV — analysis of N+3 shows significant advancement for Chinese semi manufacturing

    SMIC's N+3 process technology can achieve transistor density comparable to TSMC's N6 without using EUV lithography, but it fails to deliver performance or efficiency of modern production nodes.