Imec, ASML, and TSMC have successfully fabricated complementary 2D-material transistors on a 300mm wafer, achieving a 50nm pitch. This breakthrough integrates both n-type and p-type transistors with atomically thin 2D channels, a significant step towards overcoming the scaling limitations of silicon. The process utilized a single extreme ultraviolet (EUV) exposure to print channels as short as 28nm, with 94% of the transistors functioning correctly and demonstrating high on/off current ratios. This achievement marks a milestone in scaling 2D transistors by integrating both polarities on standard production tooling, using a novel "reverse" thin-film-transistor flow to address contact resistance issues. AI
IMPACT This advancement in transistor technology could enable more powerful and efficient AI hardware in the future.
RANK_REASON Research milestone in semiconductor fabrication involving multiple industry giants.
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- 2D transistor
- ASML Holding
- extreme ultraviolet lithography
- Gouri Sankar Kar
- IEEE/JSAP Symposium on VLSI Technology and Circuits
- Intel
- Interuniversity Microelectronics Centre
- molybdenum disulfide
- TSMC
- tungsten diselenide
- tungsten disulfide
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