Laser-driven spintronic memory device switches 1,000 times faster than DRAM —non-volatile device switches in 40 picoseconds while generating almost no heat
Researchers at the University of Tokyo have developed a novel spintronic memory device that utilizes lasers to switch bits in an astonishing 40 picoseconds. This non-volatile memory technology, based on Mn₃Sn, operates with minimal heat generation and is over 1,000 times faster than current DRAM. The innovation holds potential for creating more efficient AI hardware and advanced memory systems. AI
IMPACT This breakthrough in memory speed and efficiency could significantly enhance AI hardware capabilities.