Samsung Electronics Completes Development of 900-Layer Ultra-High Stacking 3D NAND Flash Prototype, Report Says
Samsung Electronics has successfully developed a prototype for a 900-layer 3D NAND flash memory, a significant advancement in memory technology. This prototype was achieved by stacking two 450-layer 3D NAND chips using Cell-on-Row (COR) technology, and its functionality has been confirmed. This development is a key step towards higher density and more efficient storage solutions. AI
IMPACT Enables denser and more efficient storage, crucial for AI model training and deployment.