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中文(ZH) 消息称三星电子完成900层超高堆叠3D NAND闪存原型开发

Samsung Electronics develops 900-layer 3D NAND flash prototype

By PulseAugur Editorial · [1 sources] ·

Samsung Electronics has successfully developed a prototype for a 900-layer 3D NAND flash memory, a significant advancement in memory technology. This prototype was achieved by stacking two 450-layer 3D NAND chips using Cell-on-Row (COR) technology, and its functionality has been confirmed. This development is a key step towards higher density and more efficient storage solutions. AI

IMPACT Enables denser and more efficient storage, crucial for AI model training and deployment.

RANK_REASON Research milestone in semiconductor technology development. [lever_c_demoted from research: ic=1 ai=0.7]

Read on 36氪 (36Kr) →

AI-generated summary · Google Gemini · from 1 sources. How we write summaries →

Samsung Electronics develops 900-layer 3D NAND flash prototype

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Research milestone in semiconductor technology development. [lever_c_demoted from research: ic=1 ai=0.7]
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133 days old
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COVERAGE [1]

  1. 36氪 (36Kr) TIER_1 中文(ZH) ·

    Samsung Electronics Completes Development of 900-Layer Ultra-High Stacking 3D NAND Flash Prototype, Report Says

    三星电子近期利用单元多层键合 (CMB) 技术连接两片450层3D NAND，构建了全球首个900层超高堆叠3D NAND闪存原型，这一样品的存储单元工作特性已得到验证。 （财联社）

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