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中文(ZH) 新型半导体超薄结构可兼顾低漏电与高性能

Korean researchers slash transistor contact resistance with new technique

By PulseAugur Editorial · [1 sources] ·

A research team from Pohang University of Science and Technology has developed a new technique to reduce contact resistance in ultra-thin tellurium transistors. By selectively thickening the areas that contact electrodes, they achieved a 50-fold decrease in contact resistance and improved low-temperature performance. This breakthrough was published in ACS Nano. AI

RANK_REASON Research paper published in ACS Nano detailing a new technique for transistors. [lever_c_demoted from research: ic=1 ai=0.4]

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AI-generated summary · Google Gemini · from 1 sources. How we write summaries →

Korean researchers slash transistor contact resistance with new technique

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Research paper published in ACS Nano detailing a new technique for transistors. [lever_c_demoted from research: ic=1 ai=0.4]
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COVERAGE [1]

  1. 36氪 (36Kr) TIER_1 中文(ZH) ·

    New semiconductor ultrathin structure can balance low leakage and high performance

    随着半导体芯片变得越来越薄，芯片内部各组成部分也在追求极限超薄化。然而，这带来了一个结构性限制，即器件越薄，越难导电。为破解这一难题，韩国浦项科技大学研究团队重新设计了超薄碲晶体管的金属—半导体接触结构，开发出一种大幅降低接触电阻的新技术。通过仅对与电极接触的关键区域进行局部增厚，他们将器件接触电阻降低至原有水平的1/50，并显著提升了低温性能。相关成果发表于新一期美国化学会《ACS Nano》杂志。（科技日报）

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