Korean researchers slash transistor contact resistance with new technique

A research team from Pohang University of Science and Technology has developed a new technique to reduce contact resistance in ultra-thin tellurium transistors. By selectively thickening the areas that contact electrodes, they achieved a 50-fold decrease in contact resistance and improved low-temperature performance. This breakthrough was published in ACS Nano. AI

RANK_REASON Research paper published in ACS Nano detailing a new technique for transistors. [lever_c_demoted from research: ic=1 ai=0.4]

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• ACS Nano
• Pohang University of Science and Technology
• tellurium transistors

• paper
• infra

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