AI agent automates TCAD calibration for oxide transistors

Researchers have developed an agentic workflow that uses an LLM to automate the calibration of TCAD (Technology Computer-Aided Design) models for oxide semiconductor transistors. This new method significantly speeds up the traditionally time-consuming and expert-dependent process by enabling the LLM to select parameter corrections and evaluate physical models. The workflow demonstrated a 14.3x reduction in the multi-metric device objective for a specific transistor, showcasing improved model transferability across bias and geometry compared to local fitting alone. AI

IMPACT Accelerates development of predictive models for emerging semiconductor technologies.

RANK_REASON The cluster contains a research paper detailing a new methodology for TCAD calibration using an LLM. [lever_c_demoted from research: ic=1 ai=1.0]

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• alphaXiv
• arXiv
• CatalyzeX
• DagsHub
• Gotit.pub
• Hugging Face
• In--W--O
• LLM
• oxide semiconductor transistors
• TCAD

• paper
• infra

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