Kyoto University develops 600C-capable SiC transistor using standard fab processes

Researchers at Kyoto University have developed a silicon carbide (SiC) transistor capable of operating at 600°C, a significant advancement over traditional silicon transistors which fail above 250°C. This new transistor utilizes a bottom-gate design and standard ion implantation techniques, which drastically reduce leakage and improve threshold voltage stability, maintaining it within 0.1V at 400°C. While this transistor is normally-on and requires further development for low-power complementary circuits, its compatibility with existing manufacturing processes opens possibilities for high-temperature electronics. AI

IMPACT Enables new hardware for AI systems operating in extreme environments.

RANK_REASON Research paper on a new transistor technology from a university. [lever_c_demoted from research: ic=1 ai=0.7]

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• APL Electronic Devices
• Kyoto University
• Mitsuaki Kaneko
• Shunya Shibata
• Silicon carbide
• Tsunenobu Kimoto

• infra
• other

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