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NAND Flash Memory Shifts to Molybdenum Word Lines, Driving Tool Sales

By PulseAugur Editorial · [4 sources] ·

The NAND manufacturing industry is transitioning from tungsten to molybdenum for word lines in 3D NAND flash memory, a change necessitated by the limitations of stacking over 300 layers. Molybdenum offers lower resistance and better gap-filling properties, making it essential for future high-layer count NAND. This shift is expected to drive significant sales for deposition tool manufacturers, with projections of over $1 billion in 2027 and $2 billion annually by 2030, benefiting companies like Lam, TEL, AMAT, ASMI, and Naura. Major NAND producers including Samsung, Micron, and SK Hynix have committed to this transition, with Samsung already implementing Mo word lines and Micron and SK Hynix planning mass production in the coming years. AI

IMPACT This material shift in NAND manufacturing is critical for the continued scaling of memory, which underpins the performance of AI systems.

RANK_REASON Industry-wide shift in manufacturing material for a key semiconductor component with significant financial projections.

Read on X — SemiAnalysis →

AI-generated summary · Google Gemini · from 4 sources. How we write summaries →

NAND Flash Memory Shifts to Molybdenum Word Lines, Driving Tool Sales

COVERAGE [4]

  1. X — SemiAnalysis TIER_1 English(EN) · SemiAnalysis_ ·

    Every W->Mo conversion means new deposition tools. We estimate >$1B of NAND Mo deposition tool sales in 2027 alone, growing to ~$2B/Y by 2030 as DRAM and

    Every W->Mo conversion means new deposition tools. We estimate >$1B of NAND Mo deposition tool sales in 2027 alone, growing to ~$2B/Y by 2030 as DRAM and logic follow. Lam benefits first, TEL will as well. AMAT, ASMI and Naura are leveraged to the DRAM/Logic wave. The ful…

  2. X — SemiAnalysis TIER_1 English(EN) · SemiAnalysis_ ·

    Every major NAND maker has committed.

    Every major NAND maker has committed. 🟠 Samsung: first mover, Mo word lines in volume since 2024 🟠 Micron: mass production in 2025 on Lam's ALTUS Halo 🟠 SK Hynix: 375-layer NAND with Mo by end of 2026 (3/4)

  3. X — SemiAnalysis TIER_1 English(EN) · SemiAnalysis_ ·

    Where the industry sits today: Volume production is still 2xx-layer class. Kioxia/SanDisk at 218L, Micron 276L, Samsung 286L, with SK Hynix's 321L at the leadin

    Where the industry sits today: Volume production is still 2xx-layer class. Kioxia/SanDisk at 218L, Micron 276L, Samsung 286L, with SK Hynix's 321L at the leading edge. The pivot to 3xx-4xx layers starts now. We estimate Mo goes from mid-single digit % of NAND capacity in 2025 to

  4. X — SemiAnalysis TIER_1 English(EN) · SemiAnalysis_ ·

    NAND Manufacturing is moving from Tungsten to Molybdenum (Mo): 3D NAND stopped shrinking sideways a decade ago, it scales by stacking layers. But above ~300 lay

    NAND Manufacturing is moving from Tungsten to Molybdenum (Mo): 3D NAND stopped shrinking sideways a decade ago, it scales by stacking layers. But above ~300 layers, the tungsten word lines wiring every memory cell hit a wall: resistance is too high, fluorine-based chemistry https…

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