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Deep learning model predicts full-chip CMP nanotopography with nanometer accuracy

Researchers have developed a novel deep learning model to predict the full-chip post-Chemical-Mechanical Polishing (CMP) nanotopography with nanometer-scale accuracy. This model combines data from White Light Interferometry (WLI) and Atomic Force Microscopy (AFM) to overcome the limitations of existing Density Step Height (DSH) modeling, which is often slow and resource-intensive. The proposed Convolutional Neural Network (CNN) approach aims to accelerate the layout manufacturability verification process in the Integrated Circuit (IC) industry. AI

IMPACT This model could accelerate IC design cycles by improving the accuracy and speed of manufacturability verification.

RANK_REASON This is a research paper detailing a new deep learning model for a specific engineering problem.

Read on arXiv cs.LG →

AI-generated summary · Google Gemini · from 2 sources. How we write summaries →

Deep learning model predicts full-chip CMP nanotopography with nanometer accuracy

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COVERAGE [2]

  1. arXiv cs.LG TIER_1 English(EN) · Jules Exbrayat, Renan Bouis, Elie Sezestre, Viorel Balan, Arnaud Cornelis, Damien Hebras, Catherine Euvrard ·

    Full-chip CMP modelling based on Fully Convolutional Network leveraging White Light Interferometry

    arXiv:2605.05062v1 Announce Type: new Abstract: As time-to-market is crucial in the Integrated Circuit (IC) industry, speeding up layout manufacturability verifi-cation is essential. Chemical-Mechanical Polishing (CMP) plays a vital role in IC fabrication but is significantly inf…

  2. arXiv cs.LG TIER_1 English(EN) · Catherine Euvrard ·

    Full-chip CMP modelling based on Fully Convolutional Network leveraging White Light Interferometry

    As time-to-market is crucial in the Integrated Circuit (IC) industry, speeding up layout manufacturability verifi-cation is essential. Chemical-Mechanical Polishing (CMP) plays a vital role in IC fabrication but is significantly influenced by Layout-Dependent Effects (LDE). An ac…