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Samsung Foundry delays 1.4nm node to 2029, plans High-NA EUV for 1nm in 2030

Samsung Foundry has revised its semiconductor manufacturing roadmap, delaying its 1.4nm node to 2029 and planning to adopt High-NA EUV lithography for its 1nm-class process around 2030. This strategic shift prioritizes refining its 2nm-class SF2 family to improve yields and competitiveness. The company aims to integrate High-NA EUV for nodes A10 and below, acknowledging the technology's high cost and complexity, with partners like Tesla expected to be key customers for future AI processors. AI

IMPACT This roadmap shift impacts the supply chain for advanced AI chips, potentially influencing the availability and cost of future AI processors.

RANK_REASON Foundry roadmap update with significant node delays and technology adoption plans. [lever_c_demoted from significant: ic=1 ai=0.7]

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AI-generated summary · Google Gemini · from 1 sources. How we write summaries →

Samsung Foundry delays 1.4nm node to 2029, plans High-NA EUV for 1nm in 2030

COVERAGE [1]

  1. Tom's Hardware TIER_1 English(EN) · Anton Shilov ·

    Samsung Foundry updates process roadmap to move 1.4nm node to 2029 — high-NA EUV will enable 1nm-class and smaller nodes in 2030 and beyond

    Samsung Foundry has delayed its 1.4nm-class node to 2029, making SF2 one of its longest-lasting process technologies ever. The company also aims to start using High-NA EUV for its 1nm-class process technology in 2030.