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Imec roadmap targets 0.3nm nodes by 2038, CFET transistors by early 2030s

Imec's 2026 roadmap outlines future semiconductor advancements, including the potential for 0.3nm fabrication technologies by 2038. The roadmap highlights the increasing importance of cell size for chip density and predicts that Gate-All-Around (GAA) transistors will remain viable for the next seven years. Key architectural shifts, such as the introduction of Complementary Field-Effect Transistors (CFET) and the adoption of High-NA EUV lithography, are anticipated in the early 2030s to overcome scaling limitations. AI

IMPACT This roadmap indicates advancements in semiconductor manufacturing that will enable more powerful AI hardware in the future.

RANK_REASON Roadmap detailing future semiconductor process technology and transistor architectures. [lever_c_demoted from research: ic=1 ai=0.7]

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Imec roadmap targets 0.3nm nodes by 2038, CFET transistors by early 2030s

COVERAGE [1]

  1. Tom's Hardware TIER_1 English(EN) · Anton Shilov ·

    Imec's 2026 roadmap details 0.3nm nodes by 2038, CFET transistors become viable at 0.7nm — company redefines Moore's Law as cell sizes gain importance for density

    As CPP shrinking stalls, chipmakers find a new way to increase transistor density. Imec foresees 0.3nm in 2038, CFET insertion in 2038, HLSI era.